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Advance Information ISO K Line Serial Link Interface
The MC33290 is a serial link bus interface device designed to provide bi-directional half-duplex communication interfacing in automotive diagnostic applications. It is designed to interface between the vehicle's on-board microcontroller and systems off-board the vehicle via the special ISO K line. The MC33290 is designed to meet the "Diagnostic Systems ISO9141" specification. The device's K line bus driver's output is fully protected against bus shorts and over temperature conditions. The MC33290 derives it's robustness to temperature and voltage extremes from being built on a SMARTMOSTM process, incorporating CMOS logic, bipolar/MOS analog circuitry, and DMOS power FETs. Though the MC33290 was principally designed for automotive applications, it is suited for other serial communication applications. It is parametrically specified over an ambient temperature range of -40C TA 125C and 8.0 V VBB 18 V supply. The economical 8 pin DIP and SO-8 surface mount plastic packages make the MC33290 very cost effective. * Designed to Operate Over Wide Supply Voltage of 8.0 to 18 V
MC33290
ISO K LINE SERIAL LINK INTERFACE
SEMICONDUCTOR TECHNICAL DATA
8 1
* * * * * * * * * *
Ambient Operating Temperature of -40 to 125C Interfaces Directly to Standard CMOS Microprocessors ISO K Line Pin Protected Against Shorts to Ground Thermal Shutdown with Hysteresis Maximum Transmission Speeds in Excess of 50 k Baud ISO K Line Pin Capable of High Currents ISO K Line can be Driven with up to 10 nF of Parasitic Capacitance 8.0 kV ESD Protection Attainable with Few Additional Components Standby Mode: No VBat Current Drain with VDD at 5.0 V Low Current Drain during Operation with VDD at 5.0 V
D SUFFIX PLASTIC PACKAGE CASE 751 (SO-8)
8 1
P SUFFIX PLASTIC PACKAGE CASE 626
Typical Application Schematic
On-Board Diagnostic Link +VBat D(1) +VDD MCU VCC 5.0 V 7 1.0 nF Dx SCIRxD SCITxD 8 6 5 CEN Rx Tx Gnd 3 ISO 4 27 V(3) VDD MC33290 VBB 1 500 (2) 10 nF(3) ISO K Line T xD RxD Service Scan Tool or End of Production Line Programming or System Checking 510
45 V(2)
PIN CONNECTIONS
VBB N/C Gnd ISO (K Line I/O) 1 2 3 4 (Top View) 8 CEN 7 VDD 6 Rx 5 Tx
5.0 nF(3)
ORDERING INFORMATION
Device MC33290D Operating Temperature Range TA = -40 to 125C Package SO-8 DIP-8
Rev 1
Components Necessary for: Reverse Battery (1), Overvoltage Transient (2), and 8.0 kV ESD Protection (3) in a metal module case. This device contains 85 active transistors.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
MC33290P
(c) Motorola, Inc. 1998
MOTOROLA ANALOG IC DEVICE DATA
1
MC33290
Figure 1. Simplified Block Diagram
VBB 1 50 V 3.0 k 20 V 200 10 V 10 V Rx 6 ISO 4
Master Bias CEN 8 VDD 7 Tx 5
RHys
40 V Thermal Shutdown 2.0 k 10 V 10 V Gnd 3
MAXIMUM RATINGS (All voltages are with respect to ground, unless otherwise noted.)
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VDD DC Supply Voltage VDD -0.3 to 7.0 45 40 V V V A V VBB Load Dump Peak Voltage VBB(LD) VISO ISO Pin Load Dump Peak Voltage (Note 1) ISO Short Circuit Current Limit ESD Voltage (Note 2) Human Body Model (Note 3) Machine Model (Note 4) ISO Clamp Energy (Note 5) Storage Temperature IISO(LIM) VESD1 VESD2 1.0 2000 200 10 Eclamp Tstg TC TJ mJ C C C W -55 to +150 -40 to +125 -40 to +150 0.8 Operating Case Temperature Operating Junction Temperature Power Dissipation (TA = 25C) PD Lead Soldering Temperature (Note 6) Tsolder RJA 260 150 C Thermal Resistance (Junction-to-Ambient) C/W
NOTES: 1. Device will survive double battery jump start conditions in typical applications for 10 minutes duration, but is not guaranteed to remain within specified parametric limits during this duration. 2. ESD data available upon request. 3. Testing in accordance with Human Body Model (CZap = 100 pF, RZap = 1500 ). 4. Testing in accordance with Machine Model (CZap = 100 pF, RZap = 0 ). 5. Non-repetitive clamping capability at 25C. 6. Lead soldering temperature limit is for 10 seconds maximum duration; contact Motorola Sales Office for device immersion soldering time/temperature limits.
Rating
Symbol
Value
Unit
ELECTRICAL CHARACTERISTICS (Characteristics noted under conditions of 4.75 V VDD 5.25 V, 8.0 V VBB 18 V, -40C TC 125C, unless otherwise noted.)
Characteristic POWER AND CONTROL Symbol Min Typ Max Unit
VDD Sleep State Current (Tx = 0.8 VDD, CEN = 0.3 VDD)
IDD(SS) IDD(Q)
- - -
- - -
0.1 1.0 50
mA mA A
VDD Quiescent Operating Current (Tx = 0.2 VDD, CEN = 0.7 VDD)
VBB Sleep State Current (VBB = 16 V, Tx = 0.8 VDD, CEN = 0.3 VDD)
IBB(SS)
NOTES: 1. When IBB transitions to >100 A. 2. When IBB transitions to <100 A. 3. Enable pin has an internal current pull-down equivalent to greater than 50 k. 4. Measured by ramping Tx down from 0.7 VDD and noting Tx value at which ISO falls below 0.2 VBB. 5. Measured by ramping Tx up from 0.3 VDD and noting the value at which ISO rises above 0.9 VBB. 6. Tx pin has internal current pull-up equivalent to greater than 50 k. Pull-Up current measured with Tx pin at 0.7 VDD. 7. Thermal Shutdown performance (TLIM) is guaranteed by design but not production tested.
2
MOTOROLA ANALOG IC DEVICE DATA
MC33290
ELECTRICAL CHARACTERISTICS (continued) (Characteristics noted under conditions of 4.75 V VDD 5.25 V, 8.0 V VBB 18 V, -40C TC 125C, unless otherwise noted.)
Characteristic POWER AND CONTROL Symbol Min Typ Max Unit
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VBB Quiescent Operating Current (Tx = 0.2 VDD, CEN = 0.7 VDD) Chip Enable Input High Voltage Threshold (Note 1) Input Low Voltage Threshold (Note 2) IBB(Q) - - - - - - - - - - 1.0 mA V VIH(CEN) VIL(CEN) IPD(CEN) VIL(Tx) 0.7 VDD - 2.0 - - 0.3 VDD 40 Chip Enable Pull-Down Current (Note 3) A V V Tx Input Low Voltage Threshold (RISO = 510 ) (Note 4) 0.3 x VDD - Tx Input High Voltage Threshold (RISO = 510 ) (Note 5) Tx Pull-Up Current (Note 6) VIH(Tx) IPU(Tx) 0.7 x VDD -40 - -2.0 A V V Rx Output Low Voltage Threshold (RISO = 510 , Tx = 0.2 VDD, Rx Sinking 1.0 mA) Rx Output High Voltage Threshold (RISO = 510 , Tx = 0.8 VDD, Rx Sourcing 250 A) Thermal Shutdown (Note 7) VOL(Rx) 0.2 VDD - - VOH(Rx) TLIM 0.8 VDD 150 170 C
NOTES: 1. When IBB transitions to >100 A. 2. When IBB transitions to <100 A. 3. Enable pin has an internal current pull-down equivalent to greater than 50 k. 4. Measured by ramping Tx down from 0.7 VDD and noting Tx value at which ISO falls below 0.2 VBB. 5. Measured by ramping Tx up from 0.3 VDD and noting the value at which ISO rises above 0.9 VBB. 6. Tx pin has internal current pull-up equivalent to greater than 50 k. Pull-Up current measured with Tx pin at 0.7 VDD. 7. Thermal Shutdown performance (TLIM) is guaranteed by design but not production tested.
ELECTRICAL CHARACTERISTICS (Characteristics noted under conditions of 4.75 V VDD 5.25 V, 8.0 V VBB 18.0 V,
-40C TC 125C, unless otherwise noted.) Characteristic ISO I/O Input Low Voltage Threshold (RISO = 0 , Tx = 0.8 VDD) (Note 1) Symbol Min Typ Max Unit
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VIL(ISO) - - - - - - - - - - - 0.4 x VBB - V V V Input High Voltage Threshold (RISO = 0 , Tx = 0.8 VDD) (Note 2) Input Hysteresis (Note 3) VIH(ISO) 0.7 x VBB VHys(ISO) IPU(ISO) ISC(ISO) 0.05 x VBB 10 50 - 0.1 x VBB 60 Internal Pull-Up Current (Note 4) (RISO = , Tx = 0.8 VDD, VISO = 0.5 VBB) A Short Circuit Current Limit (Note 5) (RISO = 0 , Tx = 0.4 VDD, VISO = VBB) Output Low Voltage (RISO = 510 , Tx = 0.2 VDD) Output High Voltage (RISO = , Tx = 0.8 VDD) 1000 mA V V VOL(ISO) 0.1 x VBB - VOH(ISO) tfall(ISO) 0.95 x VBB - - - Fall Time (Note 6) (RISO = 510 to VBB, CISO = 10 nF to Ground) ISO Propagation Delay (Note 7) High to Low; (RISO = 510 , CISO = 500 pF) (Note 8) Low to High; (RISO = 510 , CISO = 500 pF) (Note 9) 2.0 2.0 2.0 s s tPD(ISO)
NOTES: 1. ISO ramped from 0.8 VBB to 0.4 VBB, Monitor Rx, Value of ISO voltage at which Rx transitions to 0.3 VDD. 2. ISO ramped from 0.4 VBB to 0.8 VBB, Monitor Rx, Value of ISO voltage at which Rx transitions to 0.7 VDD. 3. Input Hysteresis, VHys(ISO) = VIH(ISO) - VIL(ISO). 4. ISO Pull-Up has >100 k internal pull-up to VBB. 5. ISO has internal current limiting. 6. Time required ISO voltage to transition from 0.8 VBB to 0.2 VBB. 7. Changes in the value of CISO affect the rise and fall time but have minimal effect on Propagation Delay. 8. Step Tx voltage from 0.2 VDD to 0.8 VDD; Time measured from VIH(ISO) until VISO reaches 0.3 VBB. 9. Step Tx voltage from 0.8 VDD to 0.2 VDD; Time measured from VIL(ISO) until VISO reaches 0.7 VBB.
MOTOROLA ANALOG IC DEVICE DATA
3
MC33290
Figure 2. ISO Input Threshold/VBB versus Temperature
VIL and VIH, INPUT THRESHOLD (RATIO) 0.6 VIH; VDD = 5.25 V, VBB = 18 V 0.575 VIH; VDD = 4.75 V, VBB = 8.0 V 0.55 0.525 0.5 0.475 -50 VIL; VDD = 5.25 V, VBB = 18 V VIL; VDD = 4.75 V, VBB = 8.0 V 0 50 100 150 VOL and VOH , ISO OUTPUT (RATIO) 1.2 1.0 0.8 0.6 0.4 0.2 VOL 0 -50 0 50 100 150 VDD = 4.75 V, VBB = 8.0 V and VDD = 5.25 V, VBB = 18 V VOH
Figure 3. ISO Output/VBB versus Temperature
TA, AMBIENT TEMPERATURE (C)
TA, AMBIENT TEMPERATURE (C)
Figure 4. ISO Fall Time versus Temperature
0.95 t PD(ISO) , PROPAGATION DELAY ( s) t fall(ISO), ISO FALL TIME ( s) 0.9 0.85 0.8 0.75 VDD = 4.75 V, VBB = 8.0 V 0.7 0.65 -50 VDD = 5.25 V, VBB = 18 V 0.7
Figure 5. ISO Propagation Delay versus Temperature
VDD = 5.25 V, VBB = 18 V 0.6 VDD = 4.75 V, VBB = 8.0 V 0.5 0.4 0.3 0.2 -50 PdH-L
VDD = 5.25 V, VBB = 18 V
PdL-H VDD = 4.75 V, VBB = 8.0 V 50 100 150
0
50
100
150
0
TA, AMBIENT TEMPERATURE (C)
TA, AMBIENT TEMPERATURE (C)
4
MOTOROLA ANALOG IC DEVICE DATA
MC33290
APPLICATIONS INFORMATION
Introduction The MC33290 is a serial link bus interface device conforming to the ISO-9141 physical bus specification. The device was designed for automotive environment usage's compliant with On-Board Diagnostic (OBD) requirements set forth by the California Air Resources Board (CARB) using the ISO K line; The device does not incorporate an ISO L line. It provides bi-directional half-duplex communications interfacing from a microcontroller to the communication bus. The MC33290 incorporates circuitry to interface the digital translations from 5.0 V microcontroller logic levels to battery level logic and from battery level logic to 5.0 V logic levels. The MC33290 is built using Motorola's SMARTMOSTM process and is packaged in both an 8 pin plastic DIP and an 8 pin plastic SOIC. Functional Description The MC33290 transforms 5.0 V microcontroller logic signals to battery level logic signals and visa-versa. This serial link interface device, operating in a typical automotive diagnostic application, operates at bit rates up to 10.4 Kbits/s with less than 2.0 s propagation delay and less than 2.0 s fall time. Rise time is a function of the resistor used in the application to pull-up the bus up to battery voltage, working in conjunction with the total capacitance present on the bus. The serial link interface will remain fully functional over a battery voltage range of 6.0 to 18 V. The device is parametrically specified over a dynamic VBB voltage range of 8.0 to 18 V. Required input levels from the microcontroller are ratio-metric with the VDD voltage; normally used to power the microcontroller. This enhances the MC33290's ability to remain in harmony with the Rx and Tx control input signals of the microcontroller. The Rx and Tx control inputs are compatible with standard 5.0 V CMOS circuitry. For fault tolerant purposes; the Tx input from the microcontroller has an internal passive pull-up to VDD of approximately 125 k while the CEN input has an internal passive pull-down to ground of approximately 125 k. In the receive mode; All ISO K Line bus input signals greater than the 0.7 x VBB thresholds are valid for a high level signal and less than the 0.4 x VBB thresholds for a low level signal. In the transmit mode; Valid ISO K line bus output signal levels are greater than 0.95 x VBB and less than 0.1 x VBB. A pull-up resistor of 100 k to battery is internally provided as well as an active data pull-down. The internal active pull-down is current limit protected against shorts to battery and further protected by thermal shutdown. Typical applications have reverse battery protection by the incorporation of an external 510 pull-up resistor and diode to battery. Reverse battery protection of the device is provided for in the Typical Application Schematic by using a reverse batter blocking diode (D). Battery line transient protection of the device is provided for by using a 45 V zener and a 500 resistor connected to the VBB source as shown in the same schematic. Device ESD protection from the communication lines exiting the module is through the use of the 10 nF connected to the VBB device pin and the 5.0 nF used in conjunction with the 27 V zener connected to the ISO pin.
MOTOROLA ANALOG IC DEVICE DATA
5
MC33290
OUTLINE DIMENSIONS
D SUFFIX PLASTIC PACKAGE CASE 751-06 ISSUE T (SO-8) A
8
D
5
C
E
1 4
H
0.25
M
B
M
h B C e A
SEATING PLANE
X 45 _
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETER. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A A1 B C D E e H h L MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.19 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_
q
L 0.10 A1 B 0.25
M
CB
S
A
S
q
8
5
P SUFFIX PLASTIC PACKAGE CASE 626-05 ISSUE K -B-
NOTES: 1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. DIM A B C D F G H J K L M N MILLIMETERS MIN MAX 9.40 10.16 6.10 6.60 3.94 4.45 0.38 0.51 1.02 1.78 2.54 BSC 0.76 1.27 0.20 0.30 2.92 3.43 7.62 BSC --- 10_ 0.76 1.01 INCHES MIN MAX 0.370 0.400 0.240 0.260 0.155 0.175 0.015 0.020 0.040 0.070 0.100 BSC 0.030 0.050 0.008 0.012 0.115 0.135 0.300 BSC --- 10_ 0.030 0.040
1
4
F
NOTE 2
-A- L
C -T-
SEATING PLANE
J N D K
M
M
H
G 0.13 (0.005) TA
M
B
M
6
MOTOROLA ANALOG IC DEVICE DATA
MC33290
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MOTOROLA ANALOG IC DEVICE DATA
MC33290/D 7

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